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IRLR3114ZTRPBF
IRLR3114ZTRPBF
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IRLR3114ZTRPBF

IRLR3114ZTRPBF
Infineon Technologies
MOSFET N-CH 40V 42A DPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
HEXFET®
Power Dissipation (Max)
140W (Tc)
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3810 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
D-Pak
Base Product Number
IRLR3114
Package
Tape & Reel (TR)^^Cut Tape (CT)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status
Active
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
FET Feature
-
Rds On (Max) @ Id, Vgs
4.9mOhm @ 42A, 10V
Vgs (Max)
±16V
Mfr
Infineon Technologies
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