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IRLU8256PBF
IRLU8256PBF
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IRLU8256PBF

IRLU8256PBF
Infineon Technologies
MOSFET N-CH 25V 81A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
63W (Tc)
Current - Continuous Drain (Id) @ 25°C
81A (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds
1470 pF @ 13 V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Series
HEXFET®
FET Type
N-Channel
Mfr
Infineon Technologies
Drain to Source Voltage (Vdss)
25 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Package
Tube
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