Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. ISS55EP06LMXTSA1
ISS55EP06LMXTSA1
ISS55EP06LMXTSA1
Favorite Products
Share:  

ISS55EP06LMXTSA1

ISS55EP06LMXTSA1
Infineon Technologies
MOSFET P-CH 60V 180MA SOT23-3
Available
RoHS Compliant
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)^^Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Base Product Number
ISS55EP06
Rds On (Max) @ Id, Vgs
5.5Ohm @ 180mA, 10V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
-
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-SOT23-3-5
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)
Vgs(th) (Max) @ Id
2V @ 11µA
TOP
RFQ List ( 0 items)