[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IXFH60N65X2
IXFH60N65X2
IXFH60N65X2
IXFH60N65X2
Favorite Products
Share:  

IXFH60N65X2

IXFH60N65X2
IXYS
MOSFET N-CH 650V 60A TO247
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
5.5V @ 4mA
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Product Status
Active
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
FET Feature
-
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds
6180 pF @ 25 V
Mounting Type
Through Hole
Base Product Number
IXFH60
Mfr
IXYS
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HiPerFET™, Ultra X2
Power Dissipation (Max)
780W (Tc)
Supplier Device Package
TO-247 (IXTH)
Related Products
2SK2737-E

Renesas Electronics America Inc
PSMN0R9-25YLC-GFX

NXP USA Inc.
IPI80N06S2L11AKSA2

Infineon Technologies
APT10045JLL

Microchip Technology
2SK2515-A

Renesas Electronics America Inc
PSMN165-200K-518

Nexperia USA Inc.
IRLL3303TRPBF

International Rectifier
BSC034N10LS5ATMA1

Infineon Technologies

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)