Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IXFH6N100
IXFH6N100
IXFH6N100
IXFH6N100
Favorite Products
Share:  

IXFH6N100

IXFH6N100
IXYS
MOSFET N-CH 1000V 6A TO247AD
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Base Product Number
IXFH6
Series
HiPerFET™
Vgs(th) (Max) @ Id
4.5V @ 2.5mA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Supplier Device Package
TO-247AD (IXFH)
Drain to Source Voltage (Vdss)
1000 V
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Mfr
IXYS
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
TOP
RFQ List ( 0 items)