Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IXFP8N65X2
IXFP8N65X2
IXFP8N65X2
Favorite Products
Share:  

IXFP8N65X2

IXFP8N65X2
IXYS
MOSFET N-CH 650V 8A TO220
Available
RoHS Compliant
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
IXYS
Package
Tube
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
450mOhm @ 4A, 10V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
Supplier Device Package
TO-220-3
Series
HiPerFET™, Ultra X2
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5V @ 250µA
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Base Product Number
IXFP8N65
TOP
RFQ List ( 0 items)