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IXFT21N50Q
IXFT21N50Q
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IXFT21N50Q

IXFT21N50Q
IXYS
MOSFET N-CH 500V 21A TO268
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4.5V @ 4mA
Product Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
250mOhm @ 10.5A, 10V
FET Feature
-
Mounting Type
Surface Mount
Series
HiPerFET™
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-268AA
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
Power Dissipation (Max)
280W (Tc)
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500 V
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