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IXFT58N20Q-TRL
IXFT58N20Q-TRL
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IXFT58N20Q-TRL

IXFT58N20Q-TRL
IXYS
MOSFET N-CH 200V 58A TO268
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Mfr
IXYS
Power Dissipation (Max)
300W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Series
HiPerFET™
Drain to Source Voltage (Vdss)
200 V
Vgs (Max)
±20V
Supplier Device Package
TO-268 (IXFT)
Vgs(th) (Max) @ Id
4V @ 4mA
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