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IXTA80N10T
IXTA80N10T
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IXTA80N10T

IXTA80N10T
IXYS
MOSFET N-CH 100V 80A TO263
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
3040 pF @ 25 V
Base Product Number
IXTA80
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 100µA
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Product Status
Active
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
IXYS
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 25A, 10V
Series
Trench
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Drain to Source Voltage (Vdss)
100 V
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