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Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin El

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IXTH50P10
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IXTH50P10

IXTH50P10
IXYS
MOSFET P-CH 100V 50A TO247
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
IXYS
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-247 (IXTH)
Package
Tube
Vgs(th) (Max) @ Id
5V @ 250µA
Mounting Type
Through Hole
Power Dissipation (Max)
300W (Tc)
Series
-
Product Status
Active
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Base Product Number
IXTH50
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
55mOhm @ 25A, 10V
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