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IXTQ110N10P
IXTQ110N10P
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IXTQ110N10P

IXTQ110N10P
IXYS
MOSFET N-CH 100V 110A TO3P
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Package / Case
TO-3P-3, SC-65-3
Mfr
IXYS
Series
Polar
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Product Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IXTQ110
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
3550 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Power Dissipation (Max)
480W (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Supplier Device Package
TO-3P
Rds On (Max) @ Id, Vgs
15mOhm @ 500mA, 10V
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