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JANTXV2N6788

JANTXV2N6788
Microsemi Corporation
MOSFET N-CH 100V 6A TO205AF
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Package
Bulk
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Mfr
Microsemi Corporation
Series
Military, MIL-PRF-19500/555
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Mounting Type
Through Hole
Power Dissipation (Max)
800mW (Tc)
Rds On (Max) @ Id, Vgs
350mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
FET Feature
-
Product Status
Obsolete
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