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NTP067N65S3H
NTP067N65S3H
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NTP067N65S3H

NTP067N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 400 V
Vgs (Max)
±30V
Package / Case
TO-220-3
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Supplier Device Package
TO-220-3
Package
Tube
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 10V
FET Feature
-
Power Dissipation (Max)
266W (Tc)
Mounting Type
Through Hole
Series
SuperFET® III
Mfr
onsemi
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