Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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PMK50XP518
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PMK50XP518

PMK50XP518
NXP USA Inc.
P-CHANNEL POWER MOSFET
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
7.9A (Tc)
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Vgs (Max)
±12V
FET Feature
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
Series
TrenchMOS™
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 20 V
Supplier Device Package
8-SO
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Mfr
NXP USA Inc.
Product Status
Active
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
50mOhm @ 2.8A, 4.5V
Power Dissipation (Max)
5W (Tc)
Package
Bulk
Drain to Source Voltage (Vdss)
20 V
Technology
MOSFET (Metal Oxide)
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