Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. PSMN4R3-100ES-127
PSMN4R3-100ES-127
PSMN4R3-100ES-127
Favorite Products
Share:  

PSMN4R3-100ES-127

PSMN4R3-100ES-127
Nexperia USA Inc.
MOSFET N-CH 100V 120A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
4V @ 1mA
Supplier Device Package
I2PAK
Series
-
Power Dissipation (Max)
338W (Tc)
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mfr
Nexperia USA Inc.
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
9900 pF @ 50 V
Package
Tube
Rds On (Max) @ Id, Vgs
4.3mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
TOP
RFQ List ( 0 items)