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R6004JNXC7G
R6004JNXC7G
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R6004JNXC7G

R6004JNXC7G
Rohm Semiconductor
MOSFET N-CH 600V 4A TO220FM
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Vgs(th) (Max) @ Id
7V @ 450µA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220FM
Base Product Number
R6004
Package / Case
TO-220-3 Full Pack
Series
-
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 100 V
Mfr
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
FET Feature
-
Mounting Type
Through Hole
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 15 V
Vgs (Max)
±30V
Power Dissipation (Max)
35W (Tc)
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1.43Ohm @ 2A, 15V
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