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R6035KNZC8
R6035KNZC8
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R6035KNZC8

R6035KNZC8
Rohm Semiconductor
MOSFET N-CHANNEL 600V 35A TO3PF
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
102mOhm @ 18.1A, 10V
Power Dissipation (Max)
102W (Tc)
Series
-
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 1mA
Mounting Type
Through Hole
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-3PF
Mfr
Rohm Semiconductor
Package / Case
TO-3P-3 Full Pack
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
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