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R6520ENZ4C13
R6520ENZ4C13
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R6520ENZ4C13

R6520ENZ4C13
Rohm Semiconductor
650V 20A TO-247, LOW-NOISE POWER
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Package
Tube
Series
-
Mfr
Rohm Semiconductor
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Supplier Device Package
TO-247G
FET Feature
-
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 630µA
Mounting Type
Through Hole
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
Power Dissipation (Max)
231W (Tc)
Operating Temperature
150°C (TJ)
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