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RF1S640SM

RF1S640SM
Harris Corporation
MOSFET N-CH 200V 18A TO263AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Bulk
Drain to Source Voltage (Vdss)
200 V
Series
-
Vgs(th) (Max) @ Id
4V @ 250µA
Supplier Device Package
TO-263AB
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Mfr
Harris Corporation
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Product Status
Active
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 25 V
Power Dissipation (Max)
125W (Tc)
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