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SCT2450KEHRC11
SCT2450KEHRC11
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SCT2450KEHRC11

SCT2450KEHRC11
Rohm Semiconductor
1200V, 10A, THD, SILICON-CARBIDE
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
+22V, -6V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Mounting Type
Through Hole
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
585mOhm @ 3A, 18V
Supplier Device Package
TO-247N
Package
Tube
Product Status
Active
Mfr
Rohm Semiconductor
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 18 V
Package / Case
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds
463 pF @ 800 V
Power Dissipation (Max)
85W (Tc)
Vgs(th) (Max) @ Id
4V @ 900µA
Series
Automotive, AEC-Q101
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Operating Temperature
175°C (TJ)
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