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SCT3022ALHRC11
SCT3022ALHRC11
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SCT3022ALHRC11

SCT3022ALHRC11
Rohm Semiconductor
SICFET N-CH 650V 93A TO247N
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SCT3022
Power Dissipation (Max)
339W
Mounting Type
Through Hole
Series
Automotive, AEC-Q101
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Operating Temperature
175°C (TJ)
Mfr
Rohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247N
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Package
Tube
Technology
SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
Vgs (Max)
+22V, -4V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Gate Charge (Qg) (Max) @ Vgs
133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2208 pF @ 500 V
Package / Case
TO-247-3
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