Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SCTH60N120G2-7
SCTH60N120G2-7
SCTH60N120G2-7
Favorite Products
Share:  

SCTH60N120G2-7

SCTH60N120G2-7
STMicroelectronics
PTD WBG & POWER RF
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Vgs (Max)
+22V, -10V
Mfr
STMicroelectronics
Drive Voltage (Max Rds On, Min Rds On)
18V
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Series
-
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 18 V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
Power Dissipation (Max)
390W (Tc)
Mounting Type
Surface Mount
FET Feature
-
Package
Tape & Reel (TR)
TOP
RFQ List ( 0 items)