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SCTW100N65G2AG
SCTW100N65G2AG
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SCTW100N65G2AG

SCTW100N65G2AG
STMicroelectronics
SICFET N-CH 650V 100A HIP247
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
STMicroelectronics
Series
Automotive, AEC-Q101
Package
Tube
Product Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Base Product Number
SCTW100
Package / Case
TO-247-3
Supplier Device Package
HiP247™
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
420W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
FET Feature
-
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