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SCTWA90N65G2V-4
SCTWA90N65G2V-4
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SCTWA90N65G2V-4

SCTWA90N65G2V-4
STMicroelectronics
TRANS SJT N-CH 650V 119A HIP247
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
STMicroelectronics
FET Feature
-
Power Dissipation (Max)
565W (Tc)
Mounting Type
Through Hole
Package / Case
TO-247-3
Package
Tube
Product Status
Active
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
5V @ 1mA
Operating Temperature
-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V
Supplier Device Package
HiP247™ Long Leads
FET Type
N-Channel
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C
119A (Tc)
Series
-
Technology
SiCFET (Silicon Carbide)
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Base Product Number
SCTWA90
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