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SI2371EDS-T1-BE3
SI2371EDS-T1-BE3
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SI2371EDS-T1-BE3

SI2371EDS-T1-BE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Series
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Mfr
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta), 4.8A (Tc)
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Supplier Device Package
SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs
45mOhm @ 3.7A, 10V
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
Product Status
Active
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Mounting Type
Surface Mount
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