Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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SI4420DY

SI4420DY
Infineon Technologies
MOSFET N-CH 30V 12.5A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
30 V
Rds On (Max) @ Id, Vgs
9mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C
12.5A (Ta)
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
Product Status
Obsolete
FET Type
N-Channel
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
2240 pF @ 15 V
Vgs(th) (Max) @ Id
1V @ 250µA
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
FET Feature
-
Series
HEXFET®
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