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SI4488DY-T1-GE3
SI4488DY-T1-GE3
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SI4488DY-T1-GE3

SI4488DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 3.5A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Mfr
Vishay Siliconix
Base Product Number
SI4488
Series
TrenchFET®
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package
Tape & Reel (TR)^^Cut Tape (CT)
Rds On (Max) @ Id, Vgs
50mOhm @ 5A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Active
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Drain to Source Voltage (Vdss)
150 V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
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