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SI7172DP-T1-GE3
SI7172DP-T1-GE3
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SI7172DP-T1-GE3

SI7172DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 25A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SI7172
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
5.4W (Ta), 96W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 100 V
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
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