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SI7456DP-T1-E3
SI7456DP-T1-E3
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SI7456DP-T1-E3

SI7456DP-T1-E3
Vishay Siliconix
MOSFET N-CH 100V 5.7A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
1.9W (Ta)
Base Product Number
SI7456
Vgs(th) (Max) @ Id
4V @ 250µA
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
FET Feature
-
Package / Case
PowerPAK® SO-8
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta)
Rds On (Max) @ Id, Vgs
25mOhm @ 9.3A, 10V
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Series
TrenchFET®
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
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