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SIDR5102EP-T1-RE3
SIDR5102EP-T1-RE3
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SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3
Vishay Siliconix
N-CHANNEL 100 V (D-S) 175C MOSFE
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Series
TrenchFET® Gen V
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Rds On (Max) @ Id, Vgs
4.1mOhm @ 20A, 10V
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Base Product Number
SIDR5102
FET Type
N-Channel
Vgs (Max)
±20V
Power Dissipation (Max)
7.5W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Vishay Siliconix
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
2850 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C
28.2A (Ta), 126A (Tc)
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