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SIDR610EP-T1-RE3
SIDR610EP-T1-RE3
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SIDR610EP-T1-RE3

SIDR610EP-T1-RE3
Vishay Siliconix
N-CHANNEL 200 V (D-S) 175C MOSFE
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SIDR610
Rds On (Max) @ Id, Vgs
31.9mOhm @ 10A, 10V
Series
TrenchFET®
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
7.5W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
PowerPAK® SO-8
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 39.6A (Tc)
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Supplier Device Package
PowerPAK® SO-8DC
Vgs (Max)
±20V
Mfr
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
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