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SIHA18N60E-E3
SIHA18N60E-E3
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SIHA18N60E-E3

SIHA18N60E-E3
Vishay Siliconix
MOSFET N-CHANNEL 600V 18A TO220
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Product Status
Active
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220 Full Pack
Base Product Number
SIHA18
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
600 V
FET Feature
-
Mounting Type
Through Hole
Power Dissipation (Max)
34W (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Series
E
Package / Case
TO-220-3 Full Pack
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
202mOhm @ 9A, 10V
Package
Tube
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
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