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SIHB100N60E-GE3
SIHB100N60E-GE3
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SIHB100N60E-GE3

SIHB100N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 30A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
Series
E
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
1851 pF @ 100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
FET Feature
-
Product Status
Active
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Rds On (Max) @ Id, Vgs
100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
FET Type
N-Channel
Supplier Device Package
D²PAK (TO-263)
Base Product Number
SIHB100
Mfr
Vishay Siliconix
Power Dissipation (Max)
208W (Tc)
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