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SIHB105N60EF-GE3
SIHB105N60EF-GE3
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SIHB105N60EF-GE3

SIHB105N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 29A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
5V @ 250µA
FET Feature
-
Package
Tube
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
Vishay Siliconix
Series
EF
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Surface Mount
Base Product Number
SIHB105
Product Status
Active
Supplier Device Package
D²PAK (TO-263)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1804 pF @ 100 V
Power Dissipation (Max)
208W (Tc)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
102mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
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