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SIHFRC20TR-GE3

SIHFRC20TR-GE3
Vishay Siliconix
MOSFET N-CHANNEL 600V
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-252AA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.2A, 10V
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
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