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SIHG050N60E-GE3
SIHG050N60E-GE3
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SIHG050N60E-GE3

SIHG050N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 51A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-247-3
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5V @ 250µA
Product Status
Active
FET Type
N-Channel
Base Product Number
SIHG050
Drain to Source Voltage (Vdss)
600 V
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Series
E
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 23A, 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3459 pF @ 100 V
Mfr
Vishay Siliconix
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-247AC
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
Mounting Type
Through Hole
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