Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SIHG11N80E-GE3
SIHG11N80E-GE3
SIHG11N80E-GE3
Favorite Products
Share:  

SIHG11N80E-GE3

SIHG11N80E-GE3
Vishay Siliconix
MOSFET N-CH 800V 12A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Package / Case
TO-247-3
Mfr
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
FET Feature
-
Base Product Number
SIHG11
Series
E
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Product Status
Active
Mounting Type
Through Hole
Power Dissipation (Max)
179W (Tc)
Drain to Source Voltage (Vdss)
800 V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Supplier Device Package
TO-247AC
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 100 V
TOP
RFQ List ( 0 items)