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SIHG35N60E-GE3
SIHG35N60E-GE3
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SIHG35N60E-GE3

SIHG35N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 32A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
94mOhm @ 17A, 10V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2760 pF @ 100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
250W (Tc)
Package / Case
TO-247-3
Vgs (Max)
±30V
Supplier Device Package
TO-247AC
Base Product Number
SIHG35
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Through Hole
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Series
E
Package
Tube
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Technology
MOSFET (Metal Oxide)
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