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SIR826DP-T1-GE3
SIR826DP-T1-GE3
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SIR826DP-T1-GE3

SIR826DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 60A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
FET Feature
-
Series
TrenchFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SIR826
Mfr
Vishay Siliconix
Product Status
Active
Package / Case
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 40 V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Supplier Device Package
PowerPAK® SO-8
Vgs(th) (Max) @ Id
2.8V @ 250µA
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