Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SIR870ADP-T1-GE3
SIR870ADP-T1-GE3
SIR870ADP-T1-GE3
Favorite Products
Share:  

SIR870ADP-T1-GE3

SIR870ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 60A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
Vishay Siliconix
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Vgs(th) (Max) @ Id
3V @ 250µA
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Series
TrenchFET®
Input Capacitance (Ciss) (Max) @ Vds
2866 pF @ 50 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Base Product Number
SIR870
Supplier Device Package
PowerPAK® SO-8
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
TOP
RFQ List ( 0 items)