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SIR876BDP-T1-RE3
SIR876BDP-T1-RE3
SIR876BDP-T1-RE3
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SIR876BDP-T1-RE3

SIR876BDP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET POW
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Supplier Device Package
PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds
3040 pF @ 50 V
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13.6A (Ta), 51.4A (Tc)
Mounting Type
Surface Mount
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Vgs (Max)
±20V
Power Dissipation (Max)
5W (Ta), 71.4W (Tc)
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