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SIRC10DP-T1-GE3
SIRC10DP-T1-GE3
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SIRC10DP-T1-GE3

SIRC10DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1873 pF @ 15 V
Product Status
Active
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PowerPAK® SO-8
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)^^Cut Tape (CT)
Package / Case
PowerPAK® SO-8
FET Feature
Schottky Diode (Body)
Base Product Number
SIRC10
Vgs (Max)
+20V, -16V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Power Dissipation (Max)
43W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 10A, 10V
Mounting Type
Surface Mount
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