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SIRC16DP-T1-RE3
SIRC16DP-T1-RE3
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SIRC16DP-T1-RE3

SIRC16DP-T1-RE3
Vishay Siliconix
N-CHANNEL 25-V (D-S) MOSFET W/SC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
25 V
Power Dissipation (Max)
5W (Ta), 54.3W (Tc)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Package / Case
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5150 pF @ 10 V
Supplier Device Package
PowerPAK® SO-8
Series
-
Current - Continuous Drain (Id) @ 25°C
57A (Ta), 60A (Tc)
Mfr
Vishay Siliconix
Vgs (Max)
+20V, -16V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.96mOhm @ 15A, 10V
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
FET Feature
Schottky Diode (Body)
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