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SIS488DN-T1-GE3
SIS488DN-T1-GE3
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SIS488DN-T1-GE3

SIS488DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 40A PPAK1212-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Base Product Number
SIS488
Input Capacitance (Ciss) (Max) @ Vds
1330 pF @ 20 V
Supplier Device Package
PowerPAK® 1212-8
Series
TrenchFET®
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® 1212-8
Mfr
Vishay Siliconix
Product Status
Active
Vgs(th) (Max) @ Id
2.2V @ 250µA
Vgs (Max)
±20V
FET Feature
-
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 20A, 10V
Mounting Type
Surface Mount
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