[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SPB11N60C3ATMA1
SPB11N60C3ATMA1
SPB11N60C3ATMA1
Favorite Products
Share:  

SPB11N60C3ATMA1

SPB11N60C3ATMA1
Infineon Technologies
MOSFET N-CH 650V 11A TO263-3
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Base Product Number
SPB11N60
Power Dissipation (Max)
125W (Tc)
Product Status
Not For New Designs
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs (Max)
±20V
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Series
CoolMOS™
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO263-3-2
Related Products
IRF4104GPBF

Infineon Technologies
SI7384DP-T1-GE3

Vishay Siliconix
IRF6710S2TRPBF

Infineon Technologies
IRLR2905ZTRPBF

Infineon Technologies
NDS8434A

Fairchild Semiconductor
FDB2670

Fairchild Semiconductor
FQP14N15

onsemi
SUM70090E-GE3

Vishay Siliconix

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)