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SPB18P06PGATMA1
SPB18P06PGATMA1
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SPB18P06PGATMA1

SPB18P06PGATMA1
Infineon Technologies
MOSFET P-CH 60V 18.7A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
60 V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Base Product Number
SPB18P06
Supplier Device Package
PG-TO263-3
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
Infineon Technologies
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs (Max)
±20V
Series
SIPMOS®
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
18.7A (Ta)
FET Feature
-
Power Dissipation (Max)
81.1W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
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