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SPB80N06S2L-09
SPB80N06S2L-09
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SPB80N06S2L-09

SPB80N06S2L-09
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Base Product Number
SPB80N
Series
OptiMOS™
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Package
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
3480 pF @ 25 V
Mfr
Infineon Technologies
Rds On (Max) @ Id, Vgs
8.5mOhm @ 52A, 10V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
190W (Tc)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Vgs(th) (Max) @ Id
2V @ 125µA
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