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SPD02N60C3BTMA1
SPD02N60C3BTMA1
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SPD02N60C3BTMA1

SPD02N60C3BTMA1
Infineon Technologies
MOSFET N-CH 650V 1.8A TO252-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SPD02N
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
3.9V @ 80µA
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Type
N-Channel
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Series
CoolMOS™
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
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