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SPD15N06S2L-64
SPD15N06S2L-64
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SPD15N06S2L-64

SPD15N06S2L-64
Infineon Technologies
MOSFET N-CH 55V 19A TO252-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Mfr
Infineon Technologies
Package
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
445 pF @ 25 V
Rds On (Max) @ Id, Vgs
64mOhm @ 8A, 10V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Series
OptiMOS™
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Vgs(th) (Max) @ Id
2V @ 14µA
Base Product Number
SPD15N
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Power Dissipation (Max)
47W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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