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SPI80N06S2-08
SPI80N06S2-08
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SPI80N06S2-08

SPI80N06S2-08
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
215W (Tc)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Vgs(th) (Max) @ Id
4V @ 150µA
Mfr
Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8mOhm @ 58A, 10V
Base Product Number
SPI80N
FET Feature
-
Supplier Device Package
PG-TO262-3-1
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 25 V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs (Max)
±20V
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
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